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专利名称：Wafer heat-treatment system and wafer
heat-treatment method
发明人：Yoshimasa Kawase申请号：US10066783申请日：20020206
公开号：US20020148135A1公开日：20021017
专利附图：
摘要：A wafer heat-treatment system for processing a wafer by a high-temperatureheat-treatment process and cooling the heat-treated wafer, comprises walls surroundinga closed space placing the wafer and having a hollow sealing a gas therein, and a
pressure-regulating unit connecting to the hollow for regulating pressure in the hollow.Hence, the wafer heat-treatment system reduces power consumption by heating lampsby carrying out an evacuating process before the high-temperature heat-treatmentprocess, and shortens the time necessary for the cool down process by a pressurizingprocess that is carried out after the completion of the high-temperature heat-treatmentprocess.
申请人：SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC.
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