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专利名称：Integrated switch device发明人：Andrej Litwin申请号：US11083524申请日：20050318
公开号：US20050212048A1公开日：20050929
专利附图：
摘要：A monolithically integrated MOS varactor switch device comprises an SOI(Silicon-an-Insulator) substrate, a gate on top of the SOI substrate, contact regions in thesubstrate at each side of the gate, and a well region arranged beneath the gate, whereinthe gate includes a gate semiconductor layer region on top of a gate insulation layer
region, and the well region interconnects the contact regions. According to the inventionthe contact regions are laterally separated from the gate, preferably by a distance of atleast 10 nm. The contact regions as well as the well region are doped to the same dopingtype, and the SOI substrate is advantageously thinner than about 200 nm to allow fulldepletion of the silicon during use of the MOS varactor switch device.
申请人：Andrej Litwin
地址：Danderyd SE
国籍：SE
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