SI1450DH-T1-E3资料

Si1450DH

New Product

Vishay Siliconix

N-Channel 8-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)0.047 at VGS = 4.5 V

8

0.051 at VGS = 2.5 V 0.058 at VGS = 1.8 V 0.069 at VGS = 1.5 V

ID (A)a4.0a4.0

a

FEATURES

Qg (Typ)

•TrenchFET® Power MOSFET: 1.5 V Rated •100 % Rg Tested

4.0a4.0a

4.24 nC

APPLICATIONS

RoHSCOMPLIANT •Load Switch for Portable Applications

-Guaranteed Operation at VGS = 1.5 V

Critical for Optimized Design and Space Savings

SOT-363SC-70 (6-LEADS)DD16DMarking CodeAHXXYYLot Traceabilityand Date CodePart # CodeSN-Channel MOSFETD25DGG34STop ViewOrdering Information:Si1450DH-T1-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted

Parameter Symbol LimitUnit VDS8Drain-Source Voltage

V

VGS± 5Gate-Source Voltage

TC = 25 °C6.04aTC = 70 °C4.8aContinuous Drain Current (TJ = 150 °C)IDTA = 25 °C4.53aTA = 70 °CA3.62a

IDMPulsed Drain Current15

TC = 25 °C2.3

ISContinuous Source-Drain Diode Current

TA = 25 °C1.3cTC = 25 °C2.78TC = 70 °C1.78

PDWMaximum Power Dissipation

TA = 25 °C1.56b, cTA = 70 °C1.0b, c

TJ, Tstg- 55 to 150Operating Junction and Storage Temperature Range

°C

260Soldering Recommendations (Peak Temperature)d, e

THERMAL RESISTANCE RATINGS

Parameter Symbol TypicalMaximumUnit RthJAt ≤ 5 sec6080Maximum Junction-to-Ambientb, f

°C/W

RthJF3445Maximum Junction-to-Foot (Drain)Steady StateNotes:

a. Package limited.

b. Surface Mounted on 1\" x 1\" FR4 Board.c. t = 5 sec.

d. Maximum under Steady State conditions is 125 °C/W.

Document Number: 74275S-62079-Rev. A, 23-Oct-06www.vishay.com

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Si1450DH

Vishay Siliconix

SPECIFICATIONS TJ = 25°C, unless otherwise noted

Static

Drain-Source Breakdown VoltageVDS Temperature CoefficientVGS(th) Temperature CoefficientGate-Source Threshold VoltageGate-Source Leakage

Zero Gate Voltage Drain CurrentOn-State Drain Currenta

VDSΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSSIDSSID(on)

VGS = 0 V, ID = 250 µA

ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 5 V VDS = 8 V, VGS = 0 V VDS = 8 V, VGS = 0 V, TJ = 55 °C

VDS ≤ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 4.0 A

Drain-Source On-State Resistancea

rDS(on)

VGS = 2.5 V, ID = 4.0 A VGS = 1.8 V, ID = 4.0 A VGS = 1.5 V, ID = 1.28 A

Forward TransconductanceaDynamicb

Input CapacitanceOutput Capacitance

Reverse Transfer CapacitanceTotal Gate ChargeGate-Source ChargeGate-Drain ChargeGate ResistanceTurn-On Delay TimeRise Time

Turn-Off Delay TimeFall Time

Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentPulse Diode Forward CurrentBody Diode Voltage

Body Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeReverse Recovery Fall TimeReverse Recovery Rise Time

ISISMVSDtrrQrrtatb

IF = 2.6 A, di/dt = 100 A/µs, TJ = 25 °C

IS = 2.6 A, VGS = 0 V

0.814.33.66.87.5

TC = 25 °C

2.6151.221.455.4

AVnsnCns

CissCossCrss QgQgs Qgd Rgtd(on) trtd(off) tf

VDD = 4 V, RL = 1.11 Ω ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω

f = 1 MHz

VDS = 4 V, VGS = 5 V, ID = 4.0 A VDS = 4 V, VGS = 4.5 V, ID = 4.0 A VDS = 4 V, VGS = 0 V, f = 1 MHz

535120614.74.241.20.8107.3873185

1112110277.5

nsΩ

7.056.4

nCpF

gfs

VDS = 4 V, ID = 4.0 A

15

0.0390.0420.0480.05315.5

0.0470.0510.0580.069

SΩ

0.38

8.32- 2.7

1110

VmV/°CV

Parameter Symbol Test Conditions Min TypMaxUnit ± 100 ns

µAA

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.

www.vishay.com2Document Number: 74275S-62079-Rev. A, 23-Oct-06

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Si1450DH

Vishay Siliconix

TYPICAL CHARACTERISTICS 25°C, unless noted

153ID– Drain Current (A)V = 5 thru 2 VGS9V = 1.5 VGS6ID– Drain Current (A)122TC = 125 °C 1TC = 25 °C TC = - 55 °C 3V = 1 VGS00.000.00.51.01.52.02.50.51.01.52.0VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V)Output Characteristics

0.10VGS = 1.5 VrDS(on)– On-Resistance ()0.08VGS = 1.5 VC – Capacitance (pF)600800Transfer Characteristics

Ciss0.06VGS = 2.5 V0.04VGS = 4.5 V0.02400200Coss0.000369121500Crss2468ID – Drain Current (A)VDS – Drain-to-Source Voltage (V)rDS(on) vs. Drain Current

5ID = 4.4 AVGS– Gate-to-Source Voltage (V)4rDS(on) – On-Resistance(Normalized)VGS = 6.4 V3VDS = 4 V1.41.6Capacitance

VGS = 4.5 VID = 4.6 AVGS = 2.5 V, ID = 4.4 AVGS = 1.8 V, ID = 4.25 AVGS = 1.5 V1.0ID = 1.2 A1.2210.80023560.6- 50- 250255075100125150Qg – Total Gate Charge (nC)TJ– Junction Temperature (°C)Gate Charge

Document Number: 74275S-62079-Rev. A, 23-Oct-06

On-Resistance vs. Junction Temperature

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Si1450DH

Vishay Siliconix

TYPICAL CHARACTERISTICS 25°C, unless noted

10rDS(on)– Drain-to-Source On-Resistance (Ω)TJ = 150 °CIS− Source Current (A)10.08ID = 4.4 A0.06TA= 125 °C 0.04TJ = 25 °C0.1TA= 25 °C 0.020.0100.40.60.80.2VSD− Source-to-Drain Voltage (V)10.00012345VGS – Gate-to-Source Voltage (V) Forward Diode Voltage vs. Temp

0.83025ID = 250µAPower (W) rDS(on) vs. VGS vs. Temperature

0.70.6VGS(th) (V)200.5150.4100.350.2- 50- 25025507510012515000.0010.010.11Time (sec)10100600TJ – Temperature (°C)Threshold Voltage100 *Limited byrDS(on)10ID–Drain Current (A)10 ms100 ms11 s10 s0.1dcSingle Pulse Power

0.01TA = 25 °CSingle Pulse0.1*VGS1BVDSS Limited101000.001VDS – Drain-to-Source Voltage (V) minimum VGS at which rDS(on)isspecifiedSafe Operating Area, Junction-to-Casewww.vishay.com4

Document Number: 74275S-62079-Rev. A, 23-Oct-06

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Si1450DH

Vishay Siliconix

TYPICAL CHARACTERISTICS 25°C, unless noted

83.63.26ID – Drain Current (A)2.8Power Dissipation (W)2.42.01.61.20.80.4002550751001251500.002550751001251504Package Limited2TC – Case Temperature (°C) TC – Case Temperature (C)Current Derating*

21Duty Cycle = 0.5Power Derating

Normalized Effective TransientThermal Impedance0.2Notes:0.10.1PDM0.05t10.02t21. Duty Cycle, D =Single Pulse0.0110-410-310-210-11Square Wave Pulse Duration (sec)2. Per Unit Base = RthJA = 100 °C/W 3. TJM – TA = PDMZthJA(t)4. Surface Mountedt1t210100600Normalized Thermal Transient Impedance, Junction-to-Ambient

*The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Document Number: 74275S-62079-Rev. A, 23-Oct-06www.vishay.com

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Si1450DH

Vishay Siliconix

TYPICAL CHARACTERISTICS 25°C, unless noted

21Duty Cycle = 0.5Normalized Effective TransientThermal Impedance0.20.10.10.050.02Single Pulse0.0110-410-310-210-1Square Wave Pulse Duration (sec)110Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliabilitydata, see http://www.vishay.com/ppg?74275.

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All product specifications and data are subject to change without notice.

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Document Number: 91000Revision: 18-Jul-08

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