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DN3545
N-Channel Depletion-ModeVertical DMOS FETs
Ordering InformationBVDSX /BVDGX450V
RDS(ON)(max)20Ω
IDSS(min)200mA
Order Number / PackageTO-92DN3545N3
TO-243AA*DN3545N8
DieDN3545ND
Product marking for TO-243AA:
DN5M❋
Where ❋ = 2-week alpha date code
* Same as SOT-. Product shipped on 2000 piece carrier tape reels.
Features
❏High input impedance❏Low input capacitance❏Fast switching speeds❏Low on resistance
❏Free from secondary breakdown❏Low input and output leakage
Advanced DMOS Technology
These depletion-mode (normally-on) transistors utilize an ad-vanced vertical DMOS structure and Supertex’s well-provensilicon-gate manufacturing process. This combination producesdevices with the power handling capabilities of bipolar transis-tors and with the high input impedance and positive temperaturecoefficient inherent in MOS devices. Characteristic of all MOSstructures, these devices are free from thermal runaway andthermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide rangeof switching and amplifying applications where high breakdownvoltage, high input impedance, low input capacitance, and fastswitching speeds are desired.
Applications
❏Normally-on switches❏Solid state relays❏Converters
❏Constant current sources❏Power supply circuits❏Telecom
Package Options
DAbsolute Maximum Ratings
Drain-to-Source VoltageDrain-to-Gate VoltageGate-to-Source Voltage
Operating and Storage TemperatureSoldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
BVDSXBVDGX± 20V
-55°C to +150°C
300°C
G D STO-243AA(SOT-)S G DTO-92Note: See Package Outline section for dimensions.12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate \"products liabilityindemnification insurance agreement.\" Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due toworkmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
1Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
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DN3545
Thermal Characteristics
PackageTO-92TO-243AA
ID (continuous)*
136mA200mA
ID (pulsed)
1.6A300mA
Power Dissipation@ TA = 25°C
0.74W1.6†
θjc°C/W12515
θja°C/W17078†
IDR*136mA200mA
IDRM1.6A300mA
* ID (continuous) is limited by max rated Tj.†
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25°C unless otherwise specified)
SymbolBVDSXVGS(OFF)∆VGS(OFF)IGSSID(OFF)
Parameter
Drain-to-SourceBreakdown Voltage
Gate-to-Source OFF VoltageChange in VGS(OFF) with TemperatureGate Body Leakage CurrentDrain-to-Source Leakage Current
Min450–1.5
–3.54.51001.01.0
IDSSRDS(ON)∆RDS(ON)GFSCISSCOSSCRSStd(ON)trtd(OFF)tfVSDtrr
Saturated Drain-to-Source CurrentStatic Drain-to-SourceON-State Resistance
Change in RDS(ON) with TemperatureForward TransconductanceInput Capacitance
Common Source Output CapacitanceReverse Transfer CapacitanceTurn-ON Delay TimeRise Time
Turn-OFF Delay TimeFall Time
Diode Forward Voltage DropReverse Recovery Time
800
150
3604015203030401.8
Vnsns
VDD = 25V,ID = 150mA,RGEN = 25Ω,VGS = 0V to -10VVGS = -5V, ISD = 150mAVGS = -5V, ISD = 150mA
pF
200
201.1
Typ
Max
UnitVVmV/°CnAµAmAmAΩ%/°Cm
Conditions
VGS = -5V, ID = 100µAVDS = 25V, ID= 10µAVDS = 25V, ID= 10µAVGS = ± 20V, VDS = 0VVGS = -5V, VDS = Max RatingVGS = -5V, VDS = 0.8 Max RatingTA = 125°C
VGS = 0V, VDS = 15VVGS = 0V, ID = 150mAVGS = 0V, ID = 150mAID = 100mA, VDS = 10VVGS = -5V, VDS = 25Vf = 1 MHz
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)2.All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
90%10%t(ON)INPUT
-10V
PULSEGENERATORRgent(OFF)trtd(OFF)tF10%td(ON)VDD
10%INPUTOUTPUT
0V
90%90%2
ΩVDDRLOUTPUT
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Typical Application Curves
OutputCharacteristics
0.7VGS=+2.0V0.6
SaturationCharacteristics
VGS=+2V0.61.0V0V)se0.5-0.5Vrepm0.4A(DI0.3-0.8V0.2-1.0V0.1-1.5V0050100150200250300350400450VDS(Volts)
Transconductancevs.DrainCurrent
0.8VDS=10VTA=-55¡C)s0.6nTA=25¡Cemeis(S0.4FGT=125¡C0.2A000.10.20.30.4ID(Amperes)
MaximumRatedSafeOperatingArea
1.0
TO-243AA(Pulsed)TO-92(Pulsed)TO-243AA(DC))se0.1TO-92(DC)repmA(DI0.01
0.001
TA=25¡C1
10
100
1000
VDS(Volts)+1.0V0.5
0V-0.5V)sere0.4
pmA(0.3
-0.8VDI0.2
-1.0V0.1
-1.5V00246810VDS(Volts)
PowerDissipationvs.AmbientTemperature
2.0
TO-243AA1.5
)sttaw(D1.0
PTO-920.5
0
0255075100125150TA(¡C)
ThermalResponseCharacteristics
1.0
)deTO-243AAzilam0.8
TA=25¡CPrD=1.6Won(ec0.6
natsiseR0.4
lamreh0.2
TTO-92TC=25¡CP0D=1.0W0.001
0.01
0.1
1
10
tp(seconds)
3
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Typical Application Curves
BVDSSVariationwithTemperature1.2ID=100µAVGS=-5V50OnResistancevs.DrainCurrentBVDSS(Normalized)RDS(ON)(ohms)1.140301.0200.910VGS=0V0.8-50050100150000.20.40.60.8TJ(¡C)TransferCharacteristics1.0VDS=10VTA=-55¡CID(Amperes)VGS(OFF)andRDS(ON)w/Temperature1.52.4VGS(OFF)(normalized)0.80.6TA=25¡C1.1VGS(OFF)@10µA1.60.4TA=125¡C0.91.20.20.7RDS(ON)@0V,150mA0.80-3-2-10120.5-500501001500.4VGS(Volts)Capacitancevs.DrainSourceVoltage300VGS=-5V250TJ(¡C)GateDriveDynamicCharacteristics321ID=150mAC(picofarads)VGS(volts)2000-1-2-3VDS=30V150CISS10050CRSS00102030COSS40-4-50123456VDS(Volts)QG(Nanocoulombs)12/13/010
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.4
1235 Bordeaux Drive, Sunnyvale, CA 940TEL: (408) 744-0100 • FAX: (408) 222-45
www.supertex.com
RDS(ON)(normalized)1.32.0ID(Amperes)
