TLE4274DV33资料

Voltage Regulator

TLE4274 / 3.3V;2.5V

Features••••••

Output voltage: 3.3 V/2.5 V ± 4%Current capability 400 mAVery low current consumptionShort-circuit proofReverse polarity proof

Suitable for use in automotive electronics

P-SOT223-4 Functional Description

The TLE4274 / 3.3V;2.5V is a voltage regulator availablein a SOT223 and TO252 package. The IC regulates aninput voltage up to 40V to VQrated = 3.3 V/2.5 V. Themaximum output current is 400mA. The IC is short-circuit proof and has a shutdown circuit protecting itagainst overtemperature. The TLE4274 is also availableas 5V, 8.5V and 10V version. Please refer to the datasheet TLE4274.

Dimensioning Information on External Components

The input capacitor CI is necessary for compensating line influences. Using a resistor ofapprox. 1Ω in series with CI, the oscillating of input inductivity and input capacitance canbe damped. The output capacitor CQ is necessary for the stability of the regulation circuit.Stability is guaranteed for capacities CQ ≥ 10 µF with an ESR of ≤ 2.5 Ω within theoperating temperature range.

P-TO252-3-1Type

TLE4274GSV33TLE4274DV33TLE4274GSV25

Data Sheet

Ordering CodeQ67006-A92Q67006-A9348Q67006-A9359

1

PackageP-SOT223-4-1P-TO252-3-1P-SOT223-4-1

Rev. 2.1, 2004-01-01

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TLE4274 / 3.3V;2.5V

Circuit Description

The control amplifier compares a reference voltage to a voltage that is proportional to theoutput voltage and drives the base of the series transistor via a buffer. Saturation controlas a function of the load current prevents any oversaturation of the power element. TheIC also includes a number of internal circuits for protection against:•••

Overload

OvertemperatureReverse polarity

P-TO252-3-1 (D-PAK)P-SOT223-4-1GNDΙGNDQ123AEP022824GND1ΙQAEP025613Figure1Table1Pin No.12, 43

I

Pin Configuration (top view)Pin Definitions and FunctionsSymbolGNDQ

Function

Input; block to ground directly at the IC with a ceramic capacitor.Ground; P-TO252-3-1: internally connected to heatsinkOutput; block to ground with capacitor CQ ≥ 10 µF, ESR ≤ 2.5 Ω

Data Sheet

2Rev. 2.1, 2004-01-01

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TLE4274 / 3.3V;2.5V

TemperatureSensorSaturationControl andProtectionCircuit3ControlAmplifierQΙ1BufferBandgapReference2GNDAEB02283Figure2Block Diagram

Data Sheet

3Rev. 2.1, 2004-01-01

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TLE4274 / 3.3V;2.5V

Table2ParameterInputVoltageCurrentOutputVoltageCurrentGroundCurrentTemperatureJunction temperatureStorage temperature

Absolute Maximum Ratings

Symbol

Limit ValuesMin.

Max.45–40–100150150

V–V–mA

–

Internally limited–

Internally limited–––

Unit

Test Condition

Tj = -40 to 150 °C

VIIIVQIQIGNDTjTstg

-42–-1.0–––-50

°C°C

Note:Maximum ratings are absolute ratings; exceeding any one of these values may

cause irreversible damage to the integrated circuit.Table3ParameterInput voltageJunction temperatureThermal ResistanceJunction ambientJunction ambientJunction caseJunction case

Operating Range

Symbol

Limit ValuesMin.

Max.4015010070254

V

––SOT2231)TO2522)SOT223TO252

4.7-40––––

Unit

Remarks

VITjRthjaRthjaRthjcRthjc

°CK/WK/WK/WK/W

1)Soldered in, 1 cm2 copper area at pin 4, FR42)Soldered in, minimal footprint, FR4

Data Sheet

4Rev. 2.1, 2004-01-01

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TLE4274 / 3.3V;2.5V

Table4ParameterOutput voltageV33-VersionOutput voltageV33-VersionOutput voltageV25-VersionOutput voltageV25-VersionOutput current limitation1)

Characteristics

Symbol

Limit ValuesMin.

Typ.3.33.32.52.56001008200.71.04010600.5

Max.3.443.442.62.6–22015301.22.07025––

VVVVmA

5 mA < IQ < 400 mA4.7 V < VI < 28 V5 mA < IQ < 200 mA4.7 V < VI < 40 V5 mA < IQ < 400 mA4.7 V < VI < 28 V5 mA < IQ < 200 mA4.7 V < VI < 40 V–

3.173.172.42.4400–––––––––

Unit

Measuring Condition

VI = 6 V; -40 °C < Tj < 150 °C (unless otherwise specified)

VQVQVQVQIQ

Current consumption;IqIq = II - IQ

Current consumption;IqIq = II - IQ

Current consumption;IqIq = II - IQDrop voltage1)V33-VersionDrop voltage1)V25-VersionLoad regulationLine regulationPower supply ripple rejection

Temperature output voltage drift

µAmAmAVVmVmVdBmV/K

IQ = 1 mAIQ = 250 mAIQ = 400 mA

IQ = 300 mAVdr = VI - VQIQ = 300 mAVdr = VI - VQ

IQ = 5 mA to 300 mA; VI = 6 V

∆Vl = 12 V to 32 VIQ = 5 mAfr = 100 Hz;Vr = 0.5 Vpp

–

VdrVdr

∆VQ∆VQ

PSRR

dVQ/dT

1)Measured when the output voltage VQ has dropped 100mV from the nominal value obtained at VI = 6 V.

Data Sheet

5Rev. 2.1, 2004-01-01

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TLE4274 / 3.3V;2.5V

Ι1TLE 4274 GSV334QVΙCQµ100 FCΙ100 nF2, 4GNDCQµ10 FVQRLoadAES02284Figure3Measuring Circuit

5 - 40 VInputΙ14Q3.3 V / 2.5 VOutputCΙ100 nFTLE 4274 GSV332, 4GNDCQ10 µFAES02285Figure4Application Circuit

Data Sheet

6Rev. 2.1, 2004-01-01

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TLE4274 / 3.3V;2.5V

4.5 - 40 VΙCΙ470 nF1 kΩGNDTLE 4276QCQ122µFINH10 Ve.g. to sensore.g. toµCΙTLE 4274 GSV33QCQ210µF3.3 VtoµCGNDAES02579Figure5Application Example

Data Sheet

7Rev. 2.1, 2004-01-01

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TLE4274 / 3.3V;2.5V

Typical Performance CharacteristicsOutput Voltage VQ versus

Junction Temperature Tj (V33-Version)

Output Voltage VQ versus

Junction Temperature Tj (V25-Version)

3.5AED02288VQV3.4VI= 6 V3.33.23.13.02.9-4004080120˚C160TjInput Current Iq versus

Input Voltage VI (V33-Version)

3.5AED01969ImAI3.02.52.01.5Tj= 25 ˚CRI= 3.3 kΩ1.00.50-2-50-25025V50VIData Sheet

2.7AED02806VQV2.6VI= 6 V2.52.42.32.22.1-4004080120˚C160TjInput Current Iq versus

Input Voltage VI (V25-Version)

3.5AED03016ImAI3.02.52.01.5Tj= 25 ˚CRI= 3.3 kΩ1.00.50-2-50-25025V50VI8Rev. 2.1, 2004-01-01

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Current Consumption Iq versusOutput Current IQ (low load)

0.6AED02268IqmA0.50.4Tj= 25 ˚CVI= 13.5 V0.30.20.10010203040mA60IQOutput Current IQ versusInput Voltage VI

800AED02287mAΙQ600Tj= 25 CV= 0 V400Q2000010203040V50VΙData Sheet

TLE4274 / 3.3V;2.5V

Current Consumption Iq versusOutput Current IQ (high load)

60AED02267IqmA504030Tj= 25 ˚CVI= 13.5 V201000100200300400mA600IQRegion of Stabilityfor CQ = 10µF

10AED03050ESRΩ98765432100.2100101102mA500IQ9Rev. 2.1, 2004-01-01

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TLE4274 / 3.3V;2.5V

Package Outlines

A6.5±0.23±0.14+0.2acc. toDIN 67840.1 MAX.1.6±0.115˚MAX.B10.7±0.14.60.25M22.330.5 MIN.0.28±0.04A0.25MB3.5±0.27±0.3GPS05560Figure6P-SOT223-4-1 (Plastic Small Outline Transistor)

You can find all of our packages, sorts of packing and others in our

Infineon Internet Page “Products”: http://www.infineon.com/products.SMD = Surface Mounted DeviceData Sheet

10

Dimensions in mmRev. 2.1, 2004-01-01

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TLE4274 / 3.3V;2.5V

6.5+0.15-0.10A5.4±0.1B2.3+0.05-0.100.9+0.08-0.041±0.19.9±0.56.22-0.20.8±0.150.51min0.15maxper side3x0.75±0.12.280...0.150.5+0.08-0.041±0.14.570.25MAB0.1GPT09051All metal surfaces tin plated, except area of cut.Figure7P-TO252-3-1 (Plastic Transistor Single Outline)

You can find all of our packages, sorts of packing and others in our

Infineon Internet Page “Products”: http://www.infineon.com/products.SMD = Surface Mounted DeviceData Sheet

11

Dimensions in mmRev. 2.1, 2004-01-01

元器件交易网www.cecb2b.com

Edition 2004-01-01

Published by Infineon Technologies AG,St.-Martin-Strasse 53,

81669 München, Germany

© Infineon Technologies AG 2004.

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The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.

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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Information

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