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专利名称：Semiconductor Device Having Multiple Work
Functions and Method of ManufactureTherefor
发明人：Husam N. Alshareef,Mark R. Visokay,Antonio
Luis Pacheco Rotondaro,Luigi Colombo
申请号：US11745918申请日：20070508
公开号：US20070284676A1公开日：20071213
专利附图：
摘要：The present invention provides a semiconductor device, a method of
manufacture therefor, and a method for manufacturing an integrated circuit. Thesemiconductor device (), among other possible elements, includes a first transistor ()located over a semiconductor substrate (), wherein the first transistor () has a metal gateelectrode () having a work function, and a second transistor () located over thesemiconductor substrate () and proximate the first transistor (), wherein the secondtransistor () has a plasma altered metal gate electrode () having a different work function.
申请人：Husam N. Alshareef,Mark R. Visokay,Antonio Luis Pacheco Rotondaro,LuigiColombo
地址：Plano TX US,Richardson TX US,Dallas TX US,Dallas TX US
国籍：US,US,US,US
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