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专利名称：Semiconductor device, display device, and
method for manufacturing semiconductordevice
发明人：Hajime Saitoh,Naoki Makita申请号：US13695217申请日：20110210公开号：US09035315B2公开日：20150519
专利附图：
摘要：A purpose of the present invention is to reduce the driving voltage of asemiconductor device that includes an n-type TFT and a p-type TFT. Disclosed is a
semiconductor device in which an n-channel type first thin film transistor () and a p-channel type second thin film transistor () are provided on the plane of a substrate (). Afirst semiconductor layer () of the first thin film transistor () has a main portion, which issandwiched between the upper surface and the lower surface of the first semiconductorlayer (), and an slanted portion, which is sandwiched by the side face and the lowersurface of the first semiconductor layer (). A second semiconductor layer () has a mainportion, which is sandwiched between the upper surface and the lower surface of thesecond semiconductor layer (), and a slanted portion, which is sandwiched between theside face and the lower surface of the second semiconductor layer (). The inclinationangle of the side face of the second semiconductor layer () relative to the plane of thesubstrate () is larger than the inclination angle of the side face of the first semiconductorlayer () relative to the plane of the substrate ().
申请人：Hajime Saitoh,Naoki Makita
地址：Osaka JP,Osaka JP
国籍：JP,JP
代理机构：Chen Yoshimura LLP
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