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专利名称：SILICON-ON-INSULATOR STRUCTURES FOR
THROUGH VIA IN SILICON CARRIERS
发明人：Brent Anderson,Paul S. Andry,Edmund J.
Sprogis,Cornelia K. Tsang
申请号：US12550494申请日：20090831
公开号：US20090315188A1公开日：20091224
专利附图：
摘要：A silicon-on-insulator (SOI) structure is provided for forming through vias in asilicon wafer carrier structure without backside lithography. The SOI structure includesthe silicon wafer carrier structure bonded to a silicon substrate structure with a layer ofburied oxide and a layer of nitride separating these silicon structures. Vias are formed in
the silicon carrier structure and through the oxide layer to the nitride layer and the wallsof the via are passivated. The vias are filled with a filler material of either polysilicon or aconductive material. The substrate structure is then etched back to the nitride layer andthe nitride layer is etched back to the filler material. Where the filler material ispolysilicon, the polysilicon is etched away forming an open via to the top surface of thecarrier wafer structure. The via is then backfilled with conductive material.
申请人：Brent Anderson,Paul S. Andry,Edmund J. Sprogis,Cornelia K. Tsang
地址：Jericho VT US,Yorktown Heights NY US,Underhill VT US,Mohegan Lake NY US
国籍：US,US,US,US
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