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专利名称：Method of manufacturing a semiconductor
integrated circuit device
发明人：Takenobu Ikeda,Masahiro Tadokoro,Masaru
Izawa,Takashi Yunogami
申请号：US099628申请日：20010928
公开号：US20020039843A1公开日：20020404
专利附图：
摘要：A hole is formed on an insulating film made of silicon oxide by selectivelyplasma-etching the insulating film with an etching gas containing CF, O, and Ar firstly
under a condition in which the deposition property of a polymer layer is weak andsecondly under a condition in which that of the polymer layer is strong.
申请人：IKEDA TAKENOBU,TADOKORO MASAHIRO,IZAWA MASARU,YUNOGAMITAKASHI
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