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专利名称：Nitride-based semiconductor element and
method of forming nitride-basedsemiconductor
发明人：Tatsuya Kunisato,Yasuhiko Nomura,Takashi
Kano,Hiroki Ohbo,Masayuki Hata
申请号：US10138420申请日：20020506
公开号：US20020167028A1公开日：20021114
专利附图：
摘要：A method of forming a nitride-based semiconductor capable of forming a
nitride-based semiconductor layer having low dislocation density with a small thickness isobtained. This method of forming a nitride-based semiconductor comprises steps oflaterally growing a nitride-based semiconductor layer on the upper surface of anunderlayer and forming quantum dots on the laterally grown nitride-basedsemiconductor layer. Thus, the number of dislocations reduced by lateral growth isfurther reduced due to a dislocation loop effect by the quantum dots. Therefore, anitride-based semiconductor having lower dislocation density is formed as compared witha case of reducing the number of dislocations only by lateral growth. The number ofdislocations is sufficiently reduced by single lateral growth due to the effect of thelateral growth reducing the number of dislocations and the effect of the quantum dotsreducing the number of dislocations, whereby the lateral growth may not be repeatedfor attaining a sufficient effect of reducing the number of dislocations. Thus, the thicknessof the nitride-based semiconductor layer can be reduced as compared with a case ofrepeating lateral growth.
申请人：SANYO ELECTRIC CO., LTD.
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